ExSolve Wafer TEM Prep DualBeam

TEM analysis sample preparation workflow for automated, high throughput semiconductor wafer analysis.

The Thermo Scientific ExSolve Wafer TEM Prep (WTP) DualBeam (FIB-SEM) system significantly reduces the cost and increases the speed of sample preparation, providing semiconductor and data storage manufacturers with rapid access to critical data for process verification and monitoring. By enabling automated, site-specific preparation of TEM lamellae across multiple wafer sites, the ExSolve DualBeam offers more comprehensive sampling than conventional methods while reducing capital costs of sample preparation by up to 70%.

This high-throughput system can prepare 20 nm thick lamellae on entire wafers up to 300 mm in diameter, utilizing a fully automated process within the fab environment. As part of a complete workflow, which includes the Thermo Scientific TEMLink and Thermo Scientific Metrios TEM systems, the ExSolve WTP DualBeam integrates FOUP handling for streamlined operation near the manufacturing line.

Tailored for High-Throughput and Advanced Node Requirements

The ExSolve WTP DualBeam is designed to meet the needs of semiconductor manufacturers who require automated, high-throughput sampling for advanced technology nodes. It complements the capabilities of the Thermo Scientific Helios NanoLab DualBeam 1200AT, which offers flexible, operator-directed sample preparation and additional capabilities such as high-resolution scanning electron microscopy (SEM) imaging and analysis

An example of automated metrology measurements taken for a 14-nm fin-cut sample, to measure the gate oxide dimensions as well as the fin height relative to two important process etch steps.

Features

Automated TEM Sample Preparation Software

The Thermo Scientific AutoTEM 5 Software integrates wafer and defect navigation with recipe definition and execution in a unified platform, ensuring operational efficiency and consistency across users of varying skill levels. AutoTEM Software simplifies TEM sample preparation, allowing users to easily schedule multi-site jobs for inverted, plan-view, and top-down TEM sample preparation workflows.

Repeatable Automated Deposition and Etching

Specifically developed to support automated TEM sample preparation, the Thermo Scientific MultiChem Gas Delivery System offers highly consistent deposition and etching capabilities. It features a motorized injection needle with saved position presets, enabling precise and reproducible gas delivery to the sample surface. Additionally, the MultiChem Gas Delivery System is engineered for easy serviceability, helping to maximize tool uptime.

Precision FIB Milling for Advanced Sample Preparation

The Helios 5 EXL DualBeam is equipped with the Thermo Scientific Phoenix Ion Column, delivering groundbreaking low-kV performance for superior TEM sample preparation.

Automated Alignments, High Resolution, and Consistent Results

The system’s high-performance Thermo Scientific Elstar Electron Column, featuring unique UC monochromatic technology, enhances resolution and TEM sample end-pointing. New SEM auto-alignment capabilities ensure consistent results across multiple tools and operators.

Automated Sample Manipulation and Lift-Out

The Thermo Scientific EasyLift Nanomanipulator provides an intuitive approach for lifting out and transferring TEM samples to a grid. With low-drift and high-precision movements, the EasyLift Nanomanipulator simplifies the creation of traditional or ultra-thin TEM lamellae. Its fast and accurate motorized rotation capabilities make it ideal for high-speed inverted or plan-view sample preparation.

Fab-Compatible Automated FOUP Loader (AFL) Option

The optional Automated FOUP Loader (AFL) enables the Helios 5 EXL DualBeam to be situated within the semiconductor wafer fab. Being located closer to the wafer process line (near-line) provides critical information up to three times faster than lab-based analysis of cleaved wafer pieces, accelerating the development of new processes and reducing the time needed to ramp up to high-volume production.

Metrology extracted from energy-dispersive X-ray spectroscopy (EDS) elemental maps of a planar-cut 3D NAND memory bit, measuring the circular dimensions of poly-Si channel, blocking oxide, tunnel oxide, and Si3N4 trap layers.

Specifications

Imaging modes

SEM, FIB, OM, Dark Field OM

Operation

Automated

FIB and SEM deposition

Carbon, Tungsten and TEOS

Stage

300mm full wafer

Thoughput

4 lamella/h

Documents

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