Focused Ion Beam-Scanning Electron Microscopy (FIB-SEM) combines two powerful techniques—Focused Ion Beam (FIB) milling and Scanning Electron Microscopy (SEM)—to provide high-resolution imaging, precise material modification, and nanofabrication. While FIB technology originated in the 1970s, its integration with SEM in the early 2000s revolutionized its use in both research and industry.
FIB-SEM systems use a dual-beam setup: an electron beam for high-resolution imaging and an ion beam (usually gallium ions) for milling or sputtering the sample. SEM captures detailed surface images, while FIB removes material to reveal subsurface structures, allowing for precise sample preparation, 3D tomography, and nanofabrication.
FIB-SEM’s versatility makes it essential across many fields. In materials science, it’s used for failure analysis, cross-sectional imaging, and 3D reconstruction of metals and polymers. The semiconductor industry relies on FIB-SEM for defect analysis, circuit editing, and TEM sample preparation. In life sciences, it’s applied for imaging biological specimens and creating ultra-thin TEM sections. It also plays key roles in forensics and geology.
With its ability to image, mill, and fabricate at the nanoscale, FIB-SEM offers unmatched flexibility and precision, making it a vital tool for advanced research and industrial applications. Its dual-beam system enables intricate material manipulation, opening new possibilities in nanotechnology and manufacturing, and making it an essential instrument for modern laboratories.
